VG36128401A View Datasheet(PDF) - Vanguard International Semiconductor

Part Name

Description

MFG CO.

VG36128401A

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor 

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VIS

Preliminary

VG36128401A

VG36128801A

VG36128161A

CMOS Synchronous Dynamic RAM

AC Parameters for Read Timing (1 of 2)

Burst Length=2, CAS Latency=2

CLK

CKE

CS

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13

tCH tCL

tCKS

tCK2

tCMS

tCMH

Begin Auto

Precharge

Bank B (Bank D)

tCKH

RAS

CAS

WE

BS

A10

ADD

DQM

DQ

Hi-Z

tAH

tAS

tRRD

tRAS

tRC

tRCD

tAC2

tLZ

tAC2

tOH

tHZ

tOH

QAa0 QAa1

tRP

tHZ

QBa0 QBa1

Activate

Command

Bank A

Read

Command

Bank A

Activate

Command

Bank B

(Bank D)

Read with

Auto Precharge

Command

Bank B

(Bank D)

Precharge

Command

Bank A

Activate

Command

Bank A

Document : 1G5-0154

Rev.1

Page 32

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