VG36128401A View Datasheet(PDF) - Vanguard International Semiconductor

Part Name

Description

MFG CO.

VG36128401A

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor 

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VIS

Preliminary

VG36128401A

VG36128801A

VG36128161A

CMOS Synchronous Dynamic RAM

AC Parameters for Read Timing (2 of 2)

Burst Length=2, CAS Latency=3

CLK

CKE

CS

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15

tCH tCL

tCKS

tCK3

tCMS

tCMH

Begin Auto

Precharge

Bank B (Bank D)

tCKH

RAS

CAS

WE

BS

A10

ADD

DQM

Hi-Z

DQ

tAH

tAS

tRRD

tRAS

tRP

tRC

tRCD

tAC3 tAC3 tHZ

tLZ

tOH tOH

QAa0 QAa1

tHZ

QBa0 QBa1

Activate

Command

Bank A

Read

Command

Bank A

Activate

Command

Bank B

(Bank D)

Read with

Precharge

Auto Precharge Command

Command

Bank A

Bank B (Bank D)

Activate

Command

Bank A

Document : 1G5-0154

Rev.1

Page 33

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