LH28F008SC View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F008SC' PDF : 38 Pages View PDF
8M (1M × 8) Flash Memory
LH28F008SC
DC CHARACTERISTICS
SYM.
PARAMETER
VCC = 3.3 V VCC = 5 V
UNIT
TYP. MAX. TYP. MAX.
TEST CONDITIONS
NOTE
ILI Input Load Current
ILO Output Leakage Current
ICCS VCC Standby Current
ICCD
VCC Deep Power-Down
Current
±0.5
±0.5
100
2
10
±1
µA VCC = VCC MAX., VIN = VCC or GND 1
±10 µA VCC = VCC MAX., VOUT = VCC or GND 1
100 µA CMOS Inputs, VCC = VCC MAX.
CE » = RP » = VCC ±0.2 V
2
mA TTL Inputs, VCC = VCC MAX.
CE » = RP » = VIH
1, 3, 6
10
µA
RP » = GND ±0.2 V IOUT
(RY »/BY ») = 0 mA
1
ICCR VCC Read Current
CMOS Inputs VCC = VCC MAX.,
12
35 mA CE» = GND, f = 5 MHz (3.3 V),
f = 8 MHz (5 V), IOUT = 0 mA
1, 5, 6
TTL Inputs, VCC = VCC MAX.,
14
50 mA CE» = VIH, f = 5 MHz (3.3 V),
f = 8 MHz, (5 V) IOUT = 0 mA
17
mA VPP = 3.3 V ±0.3 V
ICCW
VCC Byte Write or Set
Lock-Bit Current
17
35 mA VPP = 5.0 V ±10%
1, 7
12
30 mA VPP = 12.0 V ± 5%
17
VCC Block Erase or
mA VPP = 3.3 V ±0.3 V
ICCE Clear Block Lock-Bits
17
30 mA VPP = 5.0 V ±10%
1, 7
Current
12
25 mA VPP = 12.0 V ±5%
ICCWS
ICCES
VCC Byte Write or
Block Erase Suspend
Current
6
10 mA CE» = VIH
1, 2
IPPS VPP Standby or Read
IPPR Current
±15
±15 µA VPP ≤ VCC
200
200 µA VPP > VCC
1
IPPD
VPP Deep Power-Down
Current
5
5
µA RP» = GND ± 0.2V
1
40
mA VPP = 3.3 V ± 0.3 V
IPPW
VPP Byte Write or Set
Lock-Bit Current
40
40 mA VPP = 5.0 V ±10%
1, 7
15
15 mA VPP = 12.0 V ±5%
20
mA VPP = 3.3 V ± 0.3 V
IPPE
VPP Block Erase or
Clear Lock-Bit Current
20
20 mA VPP = 5.0 V ± 105
1, 7
15
15 mA VPP = 12.0 V ±5%
IPPWS
IPPES
VPP Byte Write or
Block Erase Suspend
Current
200
200
µA VPP = VPPH1/2/3
1
23
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