LH28F008SC View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F008SC' PDF : 38 Pages View PDF
LH28F008SC
8M (1M × 8) Flash Memory
ALTERNATIVE CE » - Controlled Writes1
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tPHEL
tWLEL
tELEH
tPHHEH
tVPEH
tAVEH
tDVEH
tEHDX
tEHAX
tEHWH
tEHEL
tEHRL
tEHGL
tQVVL
tQVPH
Write Cycle Time
RP » High Recovery to CE » Going Low
WE Setup to CE »# Going Low
CE » Pulse Width
RP » VHH Setup to CE » Going High
VPP Setup to CE » Going High
Address Setup to CE » Going High
Data Setup to CE » Going High
Data Hold from CE » High
Address Hold from CE » High
WE Hold from CE » High
CE » Pulse Width High
CE » High to RY »/BY » Going Low
Write Recovery before Read
VPP Hold from Valid SRD, RY»/BY » High
RP » VHH Hold from Valid SRD, RY »/BY » High
LH28F008SC-120 LH28F008SC-150
UNIT NOTE
MIN. MAX. MIN. MAX.
120
150
ns
1
1
µs
2
0
0
ns
70
70
ns
100
100
ns
2
100
100
ns
2
50
50
ns
3
50
50
ns
3
5
5
ns
5
5
ns
0
0
ns
25
25
ns
100
100 ns
0
0
µs
0
0
ns 2, 4
0
0
ns 2, 4
NOTE:
1. See 5 V VCC Alternative CE » Controlled Writes for Notes 1 through 5.
30
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