LH28F008SC View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F008SC' PDF : 38 Pages View PDF
LH28F008SC
8M (1M × 8) Flash Memory
AC CHARACTERISTICS - Write Operations1
VCC = 5 V ± 0.5 V, 5 V ± 0.25 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
LH28F008SC-856
MIN. MAX.
LH28F008SC-907
MIN. MAX.
LH28F008SC-1208
MIN. MAX.
UNIT NOTE
tAVAV Write Cycle Time
85
90
tPHWL
RP » High Recovery to WE
Going Low
1
1
120
ns
1
µs
2
tELWL CE » Setup to WE Going Low 10
10
tWLWH WE Pulse Width
40
40
tPHHWH
RP » VHH Setup to WE
Going High
100
100
10
ns
40
ns
100
ns
2
tVPWH
VPP Setup to WE
Going High
100
100
100
ns
2
tAVWH
Address Setup to WE
Going High
40
40
40
ns
3
tDVWH
Data Setup to WE
Going High
40
40
40
ns
3
tWHDX Data Hold from WE High
5
5
tWHAX
Address Hold from
WE High
5
5
5
ns
5
ns
tWHEH CE » Hold from WE High
10
10
tWHWL WE Pulse Width High
30
30
tWHRL
WE High to RY »/BY » Going
Low
90
90
10
ns
30
ns
ns
tWHGL
Write Recovery before
Read
0
0
0
ns
tQVVL
VPP Hold from Valid SRD,
RY »/BY » High
0
0
0
ns 2, 4
tQVPH
RP » VHH Hold from Valid
SRD, RY »/BY » High
0
0
0
ns 2, 4
NOTES:
1. Read timing characteristics during block erase, byte write and lock-bit configuration operations are
the same as during read-only operations. Refer to AC Characteristics for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Command Definitions Table for valid AIN and DIN for block erase, byte write, or lock-bit configuration.
4. VPP should be held at VPPH1/2/3 (and if necessary RP » should be held at VHH) until determination of block erase,
byte write, or lock-bit configuration success (SR.1/3/4/5 = 0).
5. See Ordering Information for device speeds (valid operational combinations).
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed Configuration)
for testing characteristics.
7. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration)
for testing characters.
28
Share Link: 
