LH28F008SC View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F008SC' PDF : 38 Pages View PDF
8M (1M × 8) Flash Memory
LH28F008SC
AC CHARACTERISTICS - Read Only Operations1
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tAVQV
tELQV
tPHQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
tOH
Read Cycle Time
Address to Output Delay
CE » to Output Delay
RP » High to Output Delay
OE » to Output Delay
CE » to Output in Low Z
CE » High to Output in High Z
CE » to Output in Low Z
OE » High to Output in High Z
Output Hold from Addresses, CE »
or OE » change, whichever is first
LH28F008SC-120
MIN.
MAX.
120
120
120
600
50
0
55
0
20
0
LH28F008SC-150
MIN.
MAX.
150
150
150
600
55
0
55
0
25
UNIT NOTE
ns
ns
ns
2
ns
ns
2
ns
3
ns
3
ns
3
ns
3
0
ns
3
VCC = 5 V ± 0.5 V, 5 V ± 0.25 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
LH28F00SC-855
VCC ± 5%
MIN. MAX.
LH28F00SC-906
VCC ± 10%
MIN. MAX.
LH28F00SA-1206
VCC ± 10%
MIN. MAX.
UNIT
NOTE
tAVAV Read Cycle Time
85
90
120
ns
tAVQV Address to Output Delay
85
90
120
ns
tELQV CE» to Output Delay
85
90
120
ns
2
tPHQV RP» High to Output Delay
400
400
400
ns
tGLQV OE» to Output Delay
40
45
50
ns
2
tELQX CE» to Output in Low Z
0
0
0
ns
3
tEHQZ CE» High to Output in High Z
55
55
55
ns
3
tGLQX CE» to Output in Low Z
0
0
0
ns
3
tGHQZ OE» High to Output in High Z
10
10
15
ns
3
tOH
Output Hold from Addresses, CE »
or OE » change, whichever is first
0
0
0
ns
3
NOTES:
1. See AC Input/Output Reference Waveform for maximum allowable input slew rate.
2. OE » may be delayed to to tELQV - tGLQV after the falling edge of CE » without inpact on tELQV.
3. Sampled, not 100% tested.
4. See Ordering Information for device speeds (valid operational combinations).
5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Speed Configuration) for testing
characteristics.
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration) for testing
characteristics.
25
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