8M (1M × 8) Flash Memory
LH28F008SC
1
2
3
4
5
6
ADDRESSES (A) VIH
VIL
AIN
tAVAV
AIN
tAVWH
CE (E)
VIH
VIL
tELWL tWHEH
tWHAX
tWHGL
OE (G)
VIH
VIL
tWHWL
tWHQV1, 2, 3, 4
WE (W)
VIH
VIL
tWLWH
tDVWH
tWHOX
DATA (D/Q) VIH
VIL
HIGH-Z DIN
tPHWL
DIN
tWHPL
VALID
SRD
DIN
VIH
RY/BY (R) VIL
tPHHWH
tQVPH
VHH
RP (P) VIH
VIL
VPPH3, 2, 1
VPP (V) VPPLK
VIL
NOTES:
1. VCC power-up and standby.
2. Write block erase or byte write set-up.
3. Write block erase confirm or valid address and data.
4. Automated erase or program delay.
5. Read status register data.
6. Write Read Array command.
tVPWH
tQVVL
Figure 16. AC Waveforms for WE » Controlled Write Operations
008SC-16
29