BLF369 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BLF369' PDF : 17 Pages View PDF
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
1.3 Applications
I Pulsed applications up to 500 MHz
I Communication transmitter applications in the HF/VHF/UHF band under specific
conditions
I Industrial applications up to 500 MHz under special conditions
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1] Connected to flange.
3. Ordering information
Simplified outline
Symbol
1
2
1
5
3
5
[1]
3
4
4
2
sym117
Table 3. Ordering information
Type number Package
Name Description
Version
BLF369
-
flanged LDMOST ceramic package; 2 mounting holes; SOT800-2
4 leads
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VDS
drain-source voltage
VGS
gate-source voltage
Tstg
storage temperature
Tj
junction temperature
-
65
V
−0.5 +13
V
−65 +150 °C
-
200
°C
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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