BLF369 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BLF369' PDF : 17 Pages View PDF
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
7. Application information
Table 7. RF performance in a common-source 225 MHz test circuit
Th = 25 °C unless otherwise specified.
Mode of operation
f
VDS
IDq
PL
(MHz)
(V) (A) (W)
CW, class AB
225
32
2 × 1.0 500
2-tone, class AB
pulsed, class AB [1]
f1 = 225; f2 = 225.1
225
32
2 × 1.0 -
-
-
500
[1] tp = 2 ms; δ = 10 %.
7.1 CW
PL(PEP) Gp
(W) (dB)
-
> 17
500 > 18
-
> 18
ηD
(%)
> 55
> 43
> 50
IMD3
(dBc)
-
< −24
-
∆Gp
(dB)
-
1
-
22
GP
(dB)
20
18
001aae501 70
ηD
(%)
ηD
50
GP
30
16
10
0
100
200
300
400
500
PL (W)
Fig 3. CW power gain and drain efficiency as a function of output power; typical values
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
5 of 17
Share Link: 
