BLF369 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BLF369' PDF : 17 Pages View PDF
NXP Semiconductors
21
Gp
(dB)
19
001aah500
BLF369
Multi-use VHF power LDMOS transistor
70
ηD
(%)
50
001aah501
17
30
15
0
200
400
600
800
PL (W)
f = 225 MHz; VDS = 32 V; IDq = 2 × 1 A; tp = 100 µs;
δ = 10 %.
Fig 8. Pulsed power gain as function of load power;
typical values
10
0
200
400
600
800
PL (W)
f = 225 MHz; VDS = 32 V; IDq = 2 × 1 A; tp = 100 µs;
δ = 10 %.
Fig 9. Pulsed drain efficiency as function of
load power; typical values
7.4 Maximum heatsink temperature
The heatsink temperature is defined 1 mm below the surface of the heatsink at the center
of the flange.
The maximum allowable heatsink temperature is given in the following graphs at several
pulsed conditions as well as for CW.
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
7 of 17
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