BLF369 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BLF369' PDF : 17 Pages View PDF
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
100
Th
(°C)
80
60
40
20
001aah502
(1)
(2)
(3)
(4)
(5)
0
0
200
400
600
800
1000
P (W)
δ = 10 %.
(1) tp ≤ 2 ms
(2) tp = 10 ms
(3) tp = 20 ms
(4) tp = 50 ms
(5) tp = 100 ms
Fig 10. Heatsink temperature as function of power
dissipation at a duty cycle of 10 %
100
Th
(°C)
80
60
40
20
001aah503
(1)
(2)
(3)
(4)
(5)
0
0
200
400
600
800
1000
P (W)
δ = 20 %.
(1) tp ≤ 2 ms
(2) tp = 10 ms
(3) tp = 20 ms
(4) tp = 50 ms
(5) tp = 100 ms
Fig 11. Heatsink temperature as function of power
dissipation at a duty cycle of 20 %
100
Th
(°C)
80
001aah504
60
40
20
0
100
300
500
700
P (W)
Fig 12. CW heatsink temperature as function of power dissipation
7.5 Ruggedness in class-AB operation
The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: 2-tone signal; VDS = 32 V; f = 225 MHz
at rated load power (PL(PEP) = 500 W).
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
8 of 17
Share Link: 
