BLF369 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BLF369' PDF : 17 Pages View PDF
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Rth(j-h)
Zth(j-h)
Thermal characteristics
Parameter
thermal resistance from
junction to case
thermal resistance from
junction to heatsink
transient thermal impedance
from junction to heatsink
Conditions
Tj = 200 °C
Typ Unit
[1][2] 0.26 K/W
Tj = 200 °C
[1][2][3] 0.35 K/W
Tj = 200 °C
tp = 100 µs; δ = 10 % [4]
tp = 1 ms; δ = 10 %
[4]
tp = 2 ms; δ = 10 %
[4]
tp = 3 ms; δ = 10 %
[4]
tp = 1 ms; δ = 20 %
[4]
0.063 K/W
0.117 K/W
0.133 K/W
0.142 K/W
0.140 K/W
[1] Tj is the junction temperature.
[2] Rth(j-case) and Rth(j-h) are measured under RF conditions.
[3] Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device.
[4] See Figure 1.
0.4
Zth(j-h) (7)
(K/W)
0.3
001aah494
0.2
(6)
(3)
0.1
(2)
(1)
(5)
(4)
0
10−7
10−6
10−5
10−4
10−3
10−2
10−1
1
(1) δ = 1 %
(2) δ = 2 %
(3) δ = 5 %
(4) δ = 10 %
(5) δ = 20 %
(6) δ = 50 %
(7) δ = 100 % (DC)
Fig 1. Transient thermal impedance from junction to heatsink as function of pulse duration
10
tp (s)
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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