BLF369 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BLF369' PDF : 17 Pages View PDF
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
7.6 Reliability
106
Years
105
104
(1)
(2)
(3)
(4)
(5)
(6)
001aae504
103
102
10
(7)
(8)
(9) (10) (11)
1
0
6
12
18
TTF (0.1 % failure fraction); best estimate values.
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 13. BLF369 electromigration (ID, total device)
8. Test information
24
30
Idc (A)
Table 8. List of components
For test circuit, see Figure 14, Figure 15 and Figure 16.
Component
Description
B1
semi rigid coax
B2
semi rigid coax
C1
multilayer ceramic chip capacitor
C2, C3
multilayer ceramic chip capacitor
C4, C7
multilayer ceramic chip capacitor
C5, C8
ceramic capacitor
C6, C9
electrolytic capacitor
C10, C11, C13, C14 multilayer ceramic chip capacitor
C12, C15
ceramic capacitor
Value
25 Ω; 120 mm
25 Ω; 56 mm
91 pF
56 pF
100 pF
15 nF
220 µF
220 pF
15 nF
Remarks
EZ90-25-TP
EZ90-25-TP
[1]
[1]
[1]
[1]
[1]
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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