BLF369 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BLF369' PDF : 17 Pages View PDF
NXP Semiconductors
22
GP
(dB)
20
18
7.2 2-Tone
001aae502
60
ηD
(%)
ηD
40
GP
20
BLF369
Multi-use VHF power LDMOS transistor
0
IMD3
(dBc)
−20
−40
001aae503
16
0
0
200
400
600
PL(PEP) (W)
−60
0
200
400
600
PL(PEP) (W)
VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;
IDq = 2 × 1.0 A; Th = 25 °C.
Fig 4. 2-Tone power gain and drain efficiency as a
function of peak envelope power; typical values
VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;
IDq = 2 × 1.0 A; Th = 25 °C.
Fig 5. 2-Tone third order intermodulation distortion as
a function of peak envelope power; typical
values
7.3 Pulsed
20
Gp
(dB)
19
18
001aah498
70
ηD
(%)
50
001aah499
17
30
16
15
0
200
400
600
800
PL (W)
f = 225 MHz; VDS = 32 V; IDq = 2 × 1 A; tp = 2 ms;
δ = 10 %.
Fig 6. Pulsed power gain as function of load power;
typical values
10
0
200
400
600
800
PL (W)
f = 225 MHz; VDS = 32 V; IDq = 2 × 1 A; tp = 2 ms;
δ = 10 %.
Fig 7. Pulsed drain efficiency as function of
load power; typical values
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
6 of 17
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