BLF369 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BLF369' PDF : 17 Pages View PDF
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
6. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 6 mA
[1] 65
-
VGS(th)
gate-source threshold voltage
VDS = 20 V; ID = 600 mA
[1] 4
-
IDSS
drain leakage current
VGS = 0 V; VDS = 32 V
-
-
IDSX
drain cut-off current
VGS = VGS(th) + 9 V; VDS = 10 V
-
100
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V
-
-
gfs
forward transconductance
VGS = 20 V; ID = 13 A
[1] -
15
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 9 V; ID = 13 A
[1] -
40
Ciss
input capacitance
VGS = 0 V; VDS = 32 V; f = 1 MHz [2] -
400
Coss
output capacitance
VGS = 0 V; VDS = 32 V; f = 1 MHz [2] -
230
Crss
reverse transfer capacitance
VGS = 0 V; VDS = 32 V; f = 1 MHz
-
15
[1] ID is the drain current.
[2] Ciss and Coss include reverse transfer capacitance (Crss).
Max Unit
-
V
5.5 V
4.2 µA
-
A
60 nA
-
S
-
mΩ
-
pF
-
pF
-
pF
600
Coss
(pF)
400
001aae484
200
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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